Robust cryogenic ab-initio quantum transport simulation for LG = 10 nm nanowire

• Ab initio simulation of Nanowire at cryogenic temperature. Robust ab simulation. Subthreshold slope nanowire with gate length = 10 nm. In this paper, we propose a methodology for robust and accurate ab-initio quantum transport down to 3 K an n -type Si nanowire. This is important understand the subthreshold swing (SS) We show that L G nm, SS fully dominated by direct tunneling temperature, which first time be demonstrated using simulation, best our knowledge. method achieve more than 2x speed up in convergence high biases. It also shown from leakage perspective, there no advantage operating nm transistor below 77 K.